EPROM Datasheet, 16K EPROM Datasheet, buy MF1 NMOS uv EPROM: 8kx8. x 8 ORGANIZATION mW Max ACTIVE POWER, mW Max Details, datasheet, quote on part number: MF1. The NTE is a 16,–bit ( x 8–bit) Erasable and Electrically . After erasure and reprogramming of the EPROM, it is recommended that the quartz.
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When a lamp is changed, the distance is changed, or the lamp is aged, the system should be checked to make certain full erasure is occurring.
The UV content of sunlight may cause a partial erasure of some bits in a relatively short period of time. No pins should be left open.
All bits will be at a “1” level output high in this initial state and after any full erasure. The distance from lamp to unit should be maintained at 1 inch.
Lamps dafasheet intensity as e;rom age. After the address and data signals are stable the program pin is pulsed from VI L to VIH with a pulse width between 45 ms and 55 ms. Fatasheet table of “Electrical Characteristics” provides conditions for actual device operation. Direct sunlight any intense light can cause temporary functional fail- ure eprkm to generation of photo current. Multiple pulses are not needed but will not cause device damage. All similar inputs of the MME may be par- alleled.
Programmers, components, and system designs have been erroneously suspected when incom- plete erasure was the basic problem.
Full text of “IC Datasheet: EPROM – 1”
It is recommended that the MME be kept out of direct sunlight. The programming sequence is: This exposure discharges the floating gate to its initial state through induced photo current. Table II shows the 3 programming modes. Transition times S 20 ns unless noted otherwise. These are shown in Table I. Capacitance Is guaranteed by periodic testing. The erasure time is increased by the square of the distance if the distance is doubled the erasure time goes up by a factor of 4.
Program Verify Mode The programming of the MME may be verified either 1 word at a time during the programming as shown in the timing diagram or by reading all of the words out at the end of the programming sequence. This is done 8 bits a byte at a time. A new pattern can then be written into the device by following the programming procedure.
Epron expo- sure to room level fluorescent lighting will also cause erasure. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. An opaque coating paint, tape, label, etc.
2716 – 2716 16K EPROM Datasheet
Any or all of the 8 bits associated with an address location may be programmed wFth a single program pulse applied to the chip enable pin. MMES may be programmed in parallel with the same data in this mode.
In- complete erasure will cause symptoms that can be misleading. Dataeheet conditions are for operation at: All input voltage levels, including dataxheet program pulse on chip-enable are TTL compatible. The MME to be erased should be placed 1 inch away from the lamp and no filters should be used. Program Inhibit Mode The program inhibit mode allows programming several MMES simultaneously with different data for each one by controlling which ones receive the program pulse.
The MME is packaged in a pin dual-in-line package with transparent lid. Full text of ” IC Datasheet: Except for “Operating Temperature Range” they are not meant to imply datssheet the devices should be operated at these limits.
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An erasure system should be calibrated periodically. To prevent damage the device it must not be inserted into a board with power applied. Any datxsheet address, a sequence of addresses, or addresses chosen at random may be programmed.